Semiconductor device and corresponding fabrication method

Details Semiconductor device and corresponding fabrication method Semiconductor device and corresponding fabrication method

2006-05-16

2006-05-16

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S411000

Reexamination Certificate

active

07045855

ABSTRACT:
A semiconductor device having a gate structure, the gate structure having a first gate dielectric made of a first material having a first thickness and a first dielectric constant, which is situated directly above the channel region, and an overlying second gate dielectric made of a second material having a second thickness and a second dielectric constant, which is significantly greater than the first dielectric constant; and the first thickness of the first gate dielectric and the second thickness of the second gate dielectric being chosen such that the corresponding thickness of a gate structure with the first gate dielectric, to obtain the same threshold voltage, is at least of the same magnitude as a thickness equal to the sum of the first thickness and the second thickness. The invention also relates to a corresponding fabrication method.

REFERENCES:
patent: 4200474 (1980-04-01), Morris
patent: 5238857 (1993-08-01), Sato et al.
patent: 6511876 (2003-01-01), Buchanan et al.
patent: 2004/0051134 (2004-03-01), Jang et al.

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