Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2002-08-28
2004-08-24
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S303000, C257S306000, C257S724000
Reexamination Certificate
active
06781233
ABSTRACT:
BACKGROUND OF THE INVENTION
Field of the Invention
The invention relates to a semiconductor device and to a converter device. The semiconductor device has a semiconductor component, which has a plurality of terminal regions, and a housing element, in which the semiconductor component is accommodated. At least one capacitive element is provided in an integrated manner in the housing element or in the region thereof. The capacitive element in each case has a first electrode region, a second electrode region and a dielectric region essentially provided in between. At least one electrode region of the capacitive element is electrically contact-connected to a terminal region of the semiconductor component. The respective capacitive element is able to suppress high-frequency electrical interference signals between the terminal regions.
When using semiconductor devices, in addition to the desired function, under certain circumstances, interference signals are also generated through the operation of the semiconductor devices. In order to reduce the interference signals generated during operation of the semiconductor devices and the undesired influence of the signals on the operation and function of a circuit configuration, provision is usually made of specific shielding devices and/or filter devices in explicit form in the region of the circuit configuration.
By way of example, it is known, in the case of semiconductor devices, to form filter elements between different terminal elements of the semiconductor device, in the simplest case for example a capacitor provided between two terminal elements, which filter elements can then at least partly suppress interference signals which occur during operation.
The provision of such explicit filter elements results in an additional outlay with regard to mounting.
SUMMARY OF THE INVENTION
It is accordingly an object of the invention to provide a semiconductor device and a converter device that overcome the above-mentioned disadvantages of the prior art devices of this general type, in which high-frequency interference signals that arise can be suppressed in a particularly simple manner. Furthermore, the intention is to specify a converter device in which high-frequency interference signals are suppressed in a particularly simple manner.
With the foregoing and other objects in view there is provided, in accordance with the invention, a semiconductor device. The semiconductor device contains a semiconductor component having a plurality of terminal regions, a housing element accommodating the semiconductor component, and at least one capacitive element disposed in an integrated manner in the housing element or in a region of the housing element. The capacitive element has a first electrode region, a second electrode region and a dielectric region substantially disposed in-between the first electrode region and the second electrode region. At least one of the first and second electrode regions of the capacitive element is electrically contact-connected to one of the terminal regions of the semiconductor component. The capacitive element suppressing high-frequency electrical interference signals between the terminal regions. The capacitive element also functions as an insulator element having an insulation region being the dielectric region and an electrically conductive surface region being the first electrode region disposed on the insulation region. The semiconductor component and the first insulator element are stacked directly one above another in a sandwich-shaped manner.
In known semiconductor devices, in particular in transistor devices or the like, a semiconductor component is provided, in particular a transistor, which has a plurality of terminal regions. Furthermore, in the known semiconductor device, a housing element is formed, in which at least the semiconductor component is accommodated.
The semiconductor device according to the invention, in particular the transistor device, is characterized in that at least one capacitive element or capacitor element is provided in an integrated manner in the housing element or in the region thereof. The capacitive element in each case has a first electrode region, a second electrode region and a dielectric region essentially provided in-between. At least one electrode region of the capacitive element is electrically contact-connected to a terminal region of the semiconductor component in such a way that the respective capacitive element can suppress high-frequency electrical interference signals between terminal regions, in particular essentially by short-circuiting.
It is thus a fundamental aspect of the present invention to form the capacitor in an integrated manner in the housing element of the semiconductor device, or in an integrated manner in the region thereof, which capacitor is connected up to the terminal regions of the underlying semiconductor component in such a way that interference signals, in particular high-frequency interference signals, which are generated through the operation of the semiconductor component can be suppressed, essentially short-circuiting being appropriate in particular in the high-frequency range.
In an advantageous manner, each of the electrode regions of the capacitive element is electrically contact-connected to a respective terminal region of the semiconductor component. What is thereby achieved is that precisely two terminal regions of the semiconductor component are connected in parallel with the corresponding capacitive element, resulting in the suppression precisely of high-frequency interference on account of the impedance—which is low for high frequencies—of the parallel-connected capacitive element through a short circuit. This is particularly important in the case of so-called common-mode interference, e.g. in switched-mode power supplies.
In a particularly preferred embodiment of the semiconductor device according to the invention, the semiconductor component is a transistor, in particular a field-effect transistor, having in each case a source terminal, a drain terminal and a gate terminal as terminal regions.
In this case, it is particularly appropriate for the first electrode region, that is to say the first electrode of the capacitive element, that is to say of the capacitor, to be connected to the drain terminal of the transistor.
In addition, the second electrode region, that is to say the second electrode of the capacitive element, can, moreover, be connected to the source terminal of the transistor.
The last-mentioned measures thus advantageously result in interference suppression with regard to the so-called high-voltage terminals of corresponding transistor devices.
The second electrode terminal may—if appropriate instead of contact-connection to a source region or source terminal—also be configured to be externally connectable, in particular, or be connected to a shielding region, to a ground terminal or the like.
For the concrete configuration of the capacitive element, highly varied measures can be implemented in the region of the housing element.
In accordance with a preferred embodiment of the semiconductor device according to the invention, it is provided that a first insulator element is provided in the housing element. In this case, the first insulator element has an insulation region and thereon an essentially electrically conductive surface region, in particular a metal layer or the like. Preferably, the electrically conductive surface region of the first insulator element is provided as the first electrode region of the capacitive element.
Furthermore, it is provided that the insulation region of the first insulator element is used as the dielectric region of the capacitive element.
It is furthermore advantageous if, for the further configuration of the capacitive element, there is provided as the second electrode region a second, essentially electrically conductive surface region, in particular a second metal layer or the like, on the insulation region of the first insulator element, which is essentially opposite to or opposit
Pürschel Marco
Zverev Ilia
Fahmy Wael
Greenberg Laurence A.
Infineon - Technologies AG
Mayback Gregory L.
Nguyen Dilinh
LandOfFree
Semiconductor device and converter device with an integrated... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and converter device with an integrated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and converter device with an integrated... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3343331