Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2011-06-07
2011-06-07
Le, Vu A (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S226000, C365S210120
Reexamination Certificate
active
07957205
ABSTRACT:
The present invention is a semiconductor device including: a resistor R11(first resistor part) and an FET15(second resistor part) connected in series between a power supply Vcc (first power supply) and ground (second power supply); an output node N11provided between the resistor R11and FET15and used for outputting a reference voltage; a feedback node N12provided between the power supply Vcc and the ground; and a voltage control circuit (19) that maintains a voltage of the feedback node N12at a constant level by using the reference voltage of the output node N11and the voltage of the feedback node N12. The present invention can provide a semiconductor device having a reference voltage generating circuit capable of generating the reference voltage that does not greatly depend on a power supply voltage and its control method.
REFERENCES:
patent: 5955873 (1999-09-01), Maccarrone et al.
patent: 7482857 (2009-01-01), Song
patent: 2005/0174841 (2005-08-01), Ho
patent: 2006/0113978 (2006-06-01), Suzuki
Kurihara Kazuhiro
Wada Hiroaki
Le Vu A
Spansion LLC
Yang Han
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