Static information storage and retrieval – Read/write circuit – Using different memory types
Reexamination Certificate
2011-02-15
2011-02-15
Le, Vu A (Department: 2824)
Static information storage and retrieval
Read/write circuit
Using different memory types
C365S185080, C365S185110, C365S218000
Reexamination Certificate
active
07889577
ABSTRACT:
A semiconductor device includes: a first sector (12) having data that are all to be erased and having flash memory cells; a second sector (14) having data that are all to be retained and having flash memory cells; a sector select circuit (16) selecting a pair of sectors from among sectors during erasing the data in the first sector, said pair of sectors being the first sector and the second sector; and an SRAM array (storage) (30) retaining the data of the second sector. The present invention can provide a semiconductor device in which a reduced number of sector select circuits is used so that the area of memory cell array can be reduced and provide a method of controlling the semiconductor device.
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Kurihara Kazuhiro
Murakami Hiroki
Le Vu A
Spansion LLC
Yang Han
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