Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-08
2009-06-16
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29345, C257SE21351, C438S379000
Reexamination Certificate
active
07547939
ABSTRACT:
An improved solution for performing switching, routing, power limiting, and/or the like in a circuit, such as a radio frequency (RF) circuit, is provided. A semiconductor device that includes at least two electrodes, each of which forms a capacitor, such as a voltage-controlled variable capacitor, with a semiconductor channel of the device is used to perform the desired functionality in the RF circuit. The device includes electrodes that can provide high power RF functionality without the use of ohmic contacts or requiring annealing.
REFERENCES:
patent: 4914488 (1990-04-01), Yamane et al.
patent: 5192987 (1993-03-01), Khan et al.
patent: 5429961 (1995-07-01), Woo et al.
patent: 5481125 (1996-01-01), Harris
patent: 5939753 (1999-08-01), Ma et al.
patent: 6278158 (2001-08-01), Pastor et al.
patent: 6542351 (2003-04-01), Kwang
patent: 6690042 (2004-02-01), Khan et al.
patent: 6878593 (2005-04-01), Khan et al.
patent: 2004/0036086 (2004-02-01), Khan et al.
patent: 2004/0070003 (2004-04-01), Gaska et al.
patent: 2005/0206439 (2005-09-01), Struble
Khan et al. (“AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor,” IEEE Electron Device Letters, vol. 21, No. 2, Feb. 2000, p. 63-65).
Simin et al. (“High-Power RF Switching Using III-Nitride Metal-Oxide-Semiconductor Heterojunction Capacitors,” IEEE Electron Device Letters, vol. 26, No. 2, Feb. 2005, p. 56-58).
Gopinath, “Comparison of GaAs MESFET And GaAs p-i-n Diodes as Switch Elements,” IEEE Electron Device Letters, vol. EDL-6, No. 10, Oct. 1985, pp. 505-506.
Yang et al., “High-Power Operation of III-N MOSHFET RF Switches,” Microwave and Wireless Components Letters, vol. 15, Issue 12, Dec. 2005, pp. 850-852 (pp. 1-3 in copy provided).
Simin et al., “High-Power RF Switching Using III-Nitride Metal-Oxide-Semiconductor Heterojunction Capacitors,” IEEE Electron Device Letters, vol. 26, No. 2, Feb. 2005, pp. 56-58.
Khan et al., “High electron mobility GaN/AlxGa1-xN heterostructures grown by low-pressure metalorganic chemical vapor deposition,” Applied Physics Letters, 58 (21), May 27, 1991, pp. 2408-2410.
Nagayama et al., “Low-Insertion-Loss DP3T MMIC Switch for Dual-Band Cellular Phones,” IEEE Journal Of Solid-State Circuits, vol. 34, No. 8, Aug. 1999, pp. 1051-1055.
Miyatsuji et al., “A GaAs High Power RF Single Pole Dual Throw Switch IC for Digital Mobile Communication System,” IEEE Journal of Solid-State Circuits, vol. 30, No. 9, Sep. 1995, pp. 979-983.
Katzin et al., “High-Speed, 100+ W RF Switches Using GaAs MMICs,” IEEE Transactions On Microwave Theory And Techniques, vol. 40, No. 11, Nov. 1992, pp. 1989-1996.
Khan et al., “AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor,” IEEE Electron Device Letters, vol. 21, No. 2, Feb. 2000, pp. 63-65.
Khan et al., “AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on SiC substrates,” Applied Physics Letters, vol. 77, No. 9, Aug. 28, 2000, pp. 1339-1341.
Simin et al., “7.5 kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates,” Electronic Letters, vol. 36, No. 24, Nov. 23, 2000, pp. 1-2.
Makioka et al., “Super Self-Aligned GaAs RF Switch IC with 0.25 dB Extremely Low Insertion Loss for Mobile Communication Systems,” IEEE Transactions On Electron Devices, vol. 48, No. 8, Aug. 2001, pp. 1510-1514.
Torres et al., “Monolithic Transistors SPST Switch for L-Band,” IEEE Transactions On Microwave Theory And Techniques, vol. 50, No. 1, Jan. 2002, pp. 51-56.
Koudymov et al., “Maximum current in nitride-based heterostructure field-effect transistors,” Applied Physics Letters, vol. 80, No. 17, Apr. 29, 2002, pp. 3216-3218.
Koudymov et al., “Low-Loss High Power RF Switching Using Multifinger AlGaN/GaN MOSHFETs,” IEEE Electron Device Letters, vol. 23, No. 8, Aug. 2002, pp. 449-451.
Kim et al., “A High-Performance 40-85 GHz MMIC SPDT Switch Using FET-Integrated Transmission Line Structure,” IEEE Microwave And Wireless Components Letters, vol. 13, No. 12, Dec. 2003, pp. 505-507.
Koudymov et al., “Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors,” IEEE Microwave And Wireless Components Letters, vol. 14, No. 12, Dec. 2004, pp. 560-562.
PCT International Search Report,Apr. 17, 2008,10 pages.
Gaska Remigijus
Shur Michael
Simin Grigory
Hoffman Warnick LLC
Pert Evan
Quinto Kevin
Sensor Electronic Technology, Inc.
LandOfFree
Semiconductor device and circuit having multiple voltage... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and circuit having multiple voltage..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and circuit having multiple voltage... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4111855