Semiconductor device and boost circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S213000, C257S288000, C327S111000, C327S109000, C327S467000, C327S157000, C363S059000

Reexamination Certificate

active

07612412

ABSTRACT:
A semiconductor device, includes: a field-effect transistor that configures a charge-pump circuit; and a supporting substrate that supports the field-effect transistor so that the field-effect transistor provided on the supporting substrate becomes warpable in a channel direction.

REFERENCES:
patent: 4774420 (1988-09-01), Sutton
patent: 6717216 (2004-04-01), Doris et al.
patent: 6884667 (2005-04-01), Doris et al.
patent: 7116156 (2006-10-01), Myono et al.
patent: 2002/0130703 (2002-09-01), Tsai
patent: 2001 -211637 (2001-08-01), None
patent: 2002-281739 (2002-09-01), None
patent: 2004-193596 (2004-07-01), None
patent: 2004-328901 (2004-11-01), None
patent: 2004-336985 (2004-11-01), None

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