Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-21
2011-06-21
Parekh, Nitin (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21509, C420S557000
Reexamination Certificate
active
07964492
ABSTRACT:
A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a Cu6Sn5content greater than a eutectic content.
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Hiramitsu Shinji
Ikeda Osamu
Matsuyoshi Satoshi
Nakamura Masato
Sasaki Koji
Antonelli, Terry Stout & Kraus, LLP.
Hitachi , Ltd.
Parekh Nitin
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