Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-26
2011-07-26
Sandik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29132, C257SE21207, C438S591000
Reexamination Certificate
active
07986016
ABSTRACT:
According to an aspect of the present invention, there is provided a semiconductor device including: a substrate that includes a semiconductor region including Ge as a primary component; a compound layer that is formed above the semiconductor region, that includes Ge and that has a non-metallic characteristic; an insulator film that is formed above the compound layer; an electrode that is formed above the insulator film; and source/drain regions that is formed in the substrate so as to sandwich the electrode therebetween.
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Kamata Yoshiki
Takashima Akira
Kabushiki Kaisha Toshiba
Kuo W. Wendy
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Sandik Benjamin P
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