Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-24
2007-04-24
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S410000
Reexamination Certificate
active
10242725
ABSTRACT:
A semiconductor device is prepared using an insulating film consisting of a tantalum-tungsten oxide crystal film, a tantalum-molybdenum oxide crystal film, or a laminated film where a silicon oxide, silicon oxynitride or silicon nitride film is laminated on the crystal film. The tantalum-tungsten oxide film is deposited on a substrate under an atmosphere of a mixture of the first material gas comprising tantalum, the second material gas comprising tungsten and an oxidizing agent. For improving a dielectric constant of the tantalum-tungsten or tantalum-molybdenum oxide crystal film, on a Ru substrate with (001) orientation is deposited a oxide crystal film, which is then heated in N2O plasma and subject to rapid thermal nitriding.
REFERENCES:
patent: 4686544 (1987-08-01), Ikeda et al.
patent: 4745082 (1988-05-01), Kwok
patent: 4839097 (1989-06-01), Noi et al.
patent: 5134451 (1992-07-01), Katoh
patent: 5187638 (1993-02-01), Sandhu et al.
patent: 5225286 (1993-07-01), Fujikawa et al.
patent: 5290609 (1994-03-01), Horiike et al.
patent: 5336638 (1994-08-01), Suzuki et al.
patent: 5642213 (1997-06-01), Mase et al.
patent: 5834797 (1998-11-01), Yamanaka
patent: 6010744 (2000-01-01), Buskirk et al.
patent: 6150183 (2000-11-01), Fukuda et al.
patent: 6319730 (2001-11-01), Ramdani et al.
patent: 6887594 (2005-05-01), Li et al.
patent: 62-120066 (1987-06-01), None
patent: 10-22455 (1998-01-01), None
patent: 10-135418 (1998-05-01), None
patent: 11-87648 (1999-03-01), None
H. Fujikawa wt al., “Effects of additive elements on electrical properties of tantalum oxide films”, Journal of Applies Physics, vol. 75, No. 5, (Mar. 1, 1994), pp. 2538-2544.
Y. Fukuzumi et al., The 46thApplied Physics Association Meeting proceeding, (Spring 1999), No. 2, 30p- ZS-13, pp. 883.
H. Fujikawa et al., “Effects of Additive Elements on Electrical Properties of Tantalum Oxide Films”, Materials Research Society Symposium Proceedings, vol. 378, (1995), pp. 1025-1030 with Abstract.
H. Kimura et al., “Extended x-ray absorption fine structure analysis of the difference in local structure of tantalum oxide capacitor films produced by various annealing methods”, Applied Physics Letter, vol. 66, No. 17, (Apr. 24, 1995), pp. 2209-2211.
S. Sawada, “Thermal and Electrical Properties of Tungsten Oxide (WO3)”, Journal of the Physical Society of Japan, vol. 11, No. 12, (Dec. 1956), pp. 1237-1246.
E. Lefkowitz et al., “Phase Transitions in Tungsten Trioxide at Low Temperatures”, Journal Solid State Chemistry, vol. 15, (1975), pp. 24-39.
J. Lin et al., “Ta2O5thin films with exceptionally high dielectric constant”, Applied Physics Letters, vol. 74, No. 16, (1999), pp. 2370-2372.
NEC Corporation
Owens Douglas W.
Sughrue & Mion, PLLC
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