Semiconductor device and a method of producing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257308, 437189, 437193, 437233, 437245, 437919, H01L 2968, H01L 2144

Patent

active

052237290

ABSTRACT:
A semiconductor device in which a shortage node of a storage capacitor in a memory cell has rounded edges in cross section and a method of producing the same. A breakdown of a dielectric film in the vicinity of the rounded edges of the storage node is prevented, because electric field concentrations in the vicinity of edges of a storage node is relaxed by rounded shapes of the storage node.

REFERENCES:
patent: 5095346 (1992-03-01), Bae et al.
patent: 5100822 (1992-03-01), Mitani
Yoshikawa et al,-Extended Abstracts of 16th (1984 International Conference on Solid Devices and Materials) Kobe 1984, pp. 475-478.

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