Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-09-24
1993-06-29
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257308, 437189, 437193, 437233, 437245, 437919, H01L 2968, H01L 2144
Patent
active
052237290
ABSTRACT:
A semiconductor device in which a shortage node of a storage capacitor in a memory cell has rounded edges in cross section and a method of producing the same. A breakdown of a dielectric film in the vicinity of the rounded edges of the storage node is prevented, because electric field concentrations in the vicinity of edges of a storage node is relaxed by rounded shapes of the storage node.
REFERENCES:
patent: 5095346 (1992-03-01), Bae et al.
patent: 5100822 (1992-03-01), Mitani
Yoshikawa et al,-Extended Abstracts of 16th (1984 International Conference on Solid Devices and Materials) Kobe 1984, pp. 475-478.
Kudoh Chiaki
Nishio Mikio
Uno Akito
Matsushita Electric - Industrial Co., Ltd.
Wojciechowicz Edward
LandOfFree
Semiconductor device and a method of producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and a method of producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and a method of producing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1757661