Semiconductor device and a method of manufacturing thereof

Details Semiconductor device and a method of manufacturing thereof Semiconductor device and a method of manufacturing thereof

1994-06-30

1995-08-22

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257351, 257382, 257384, 257900, H01L 2701, H01L 2910, H01L 2702, H01L 2348

Patent

active

054442826

ABSTRACT:
A semiconductor device of a field effect transistor having an SOI structure is formed as below. Using a gate electrode 20 as a mask, n type impurities are implanted into an SOI layer of p type to form additional source/drain regions of intermediate concentration. Then, a relatively thin sidewall spacer is formed at the sidewall of the gate electrode. Using the sidewall spacer as a mask, a titanium silicide layer is formed in self-alignment on the surface of the SOI layer. Next, a relatively thick sidewall spacer is formed. Using this sidewall spacer as a mask, n type impurities are implanted to form a source/drain region of high concentration. According to this manufacturing step, over-etching of the source/drain region are prevented in performing anisotropic etching at the time of sidewall spacer formation.

REFERENCES:
patent: 4873557 (1989-10-01), Kita
patent: 5040037 (1991-08-01), Yamaguchi et al.
patent: 5341028 (1994-08-01), Yamaguchi et al.
Nishimura et al., "SOI Technology", Ouyou Butsuri (Applied Physics), vol. 54, No. 12, (1983) pp. 1274-1283.

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