Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-01-24
1996-03-05
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257385, 257752, 257903, 257755, H01L 2978
Patent
active
054970229
ABSTRACT:
A semiconductor device includes a polycrystalline silicon layer formed on a silicon layer with an oxide film therebetween, an interlayer insulating layer formed to cover the surface of the silicon layer and the surface of the polycrystalline silicon layer, and a silicon plug layer formed in an embedded manner in a contact hole in the interlayer insulating layer to be directly connected to the surface of an end portion of the polycrystalline silicon layer and the surface of the silicon layer in the proximity of the end portion of the polycrystalline silicon layer. The polycrystalline silicon layer and the silicon plug layer have the same type of conductivity. By this interconnection structure, the semiconductor device is improved in the patterning accuracy of the contact portion of a multilayer stacked interconnection. Furthermore, an ohmic contact between conductive interconnection layers can be realized with relatively simple manufacturing steps without occurrence of a voltage drop caused by a pn junction.
REFERENCES:
patent: 5151387 (1992-09-01), Brady et al.
patent: 5336916 (1994-08-01), Chan et al.
"A Memory Cell with Polysilicon Thin Film Transistor (TFT) for a 4Mbit SRAM", by Kazuhito Tsutsumi et al, Institute of Electronics and Communication Engineers of Japan Technical Report, vol. 90, No. 48, pp. 7-13. 1991.
Mitsubishi Denki & Kabushiki Kaisha
Monin, Jr. Donald L.
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