Semiconductor device and a method of manufacturing thereof

Details Semiconductor device and a method of manufacturing thereof Semiconductor device and a method of manufacturing thereof

1997-06-25

2000-08-01

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257307, 257308, 257309, H01L 27108

Patent

active

060970529

ABSTRACT:
A contact hole having an opening diameter smaller than the minimum dimension that can be formed by photolithographic technique is formed. Using an interlayer insulating film 8 formed on a semiconductor substrate as an etching mask, etching is carried out halfway to form an opening 8a. The etching mask is removed, and a TEOS film 10 is formed on the interlayer oxide film 8. The whole surface is then etched anisotropically to form a contact hole 11.

REFERENCES:
patent: 4985718 (1991-01-01), Ishijima
patent: 5434439 (1995-07-01), Ajika et al.
patent: 5453633 (1995-09-01), Yum
patent: 5478768 (1995-12-01), Iwasa
patent: 5561311 (1996-10-01), Hamamoto et al.
"An Optically Delineated 4.2-.mu.m.sup.2 Self-Aligned Isolated-Plate Stacked-Capacitor DRAM Cell", Shin-Ichiro Kimura et al, IEEE Transactions on Electron Devices, vol. 35, No. 10, Oct. 1988, pp. 1591-1595.
"2nd Generation 16Mbit DRAM", Koshimaru et al. NEC Technical Report Vo. 46 No. 2/1993, pp. 90-93, Feb. 1993.
"Novel Stacked Capacitor Cell for 64MB DRAM", Wakamiya et al., VL Symposium 1989, pp. 69 and 70., Dec. 1989.
"3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAM", T. Ema et al., IEDM 88, pp. 592-595., Dec. 1988.

Affiliated with

Also associated with

Rating

Semiconductor device and a method of manufacturing thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and a method of manufacturing thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and a method of manufacturing thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-666459