Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

2007-02-20

2007-02-20

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S630000, C438S637000

Reexamination Certificate

active

10901990

ABSTRACT:
In a semiconductor device, the ohmic contact at the junction between the metal interconnection and the semiconductor layer is lowered by depositing a first conductor layer comprised of, for example, tungsten nitride and a second conductor layer comprised of, for example, tungsten silicide successively from the lower layer so as to cover the upper surface of intermediate conductive layers comprised of a metal, for example, tungsten as a main interconnection material, subsequently introducing an impurity, for example, boron (b) to the second conductor layer, then patterning the first and the second conductor layers thereby forming a conductor layer, and then forming a lower semiconductor layer comprised of, for example, polycrystal silicon for forming a semiconductor region for source and drain of load MISFET of SRAM so as to be in contact with the conductor layer.

REFERENCES:
patent: 5744394 (1998-04-01), Iguchi et al.
patent: 05-315333 (1993-11-01), None
patent: 05315333 (1993-11-01), None
patent: 08-204009 (1996-08-01), None
patent: 08-264536 (1996-10-01), None
patent: 09-283462 (1997-10-01), None

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