Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-04
2007-12-04
Smith, Bradley K (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C257SE21575
Reexamination Certificate
active
11602196
ABSTRACT:
An insulating portion of the respective wiring layers for a semiconductor device is constituted of insulating films. The one insulating film is made of a material whose conductivity is higher than that of the other insulating film that is made of an ordinary silicon oxide film and is provided in contact with the wiring. An electric charge accumulated in the wiring generated in the course of manufacture of the semiconductor device is discharged through the one insulating film at a stage where a charge accumulation in the wiring is low. This permits the heat release value generated through the discharge to be suppressed to a low level, and the short-circuiting-failure between adjacent wirings to be suppressed or prevented.
REFERENCES:
patent: 2002/0100984 (2002-08-01), Oshima et al.
patent: 2004/0089924 (2004-05-01), Yuasa et al.
Hotta Katsuhiko
Sahara Masashi
Sato Kazuhiko
Suwanai Naokatsu
Tachigami Atsushi
Hitachi ULSI Systems Co. Ltd.
Smith Bradley K
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