Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

1999-01-20

2000-07-18

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257300, 257306, H01L 27108

Patent

active

060910976

ABSTRACT:
In a semiconductor device, a contact region is formed with polycrystalline silicon or the like to be connected to a drain fabricated at a predetermined position of a semiconductor substrate. A bit line is formed with polycrystalline silicon or the like to be coupled with a contact region and then a dummy wiring is simultaneously fabricated at a predetermined position in a peripheral region of the substrate. Thanks to the provision, a film formed through a coating process has a uniform thickness.

REFERENCES:
patent: 5281555 (1994-01-01), Cho
patent: 5300814 (1994-04-01), Matsumoto et al.
patent: 5300816 (1994-04-01), Lee et al.
patent: 5689126 (1997-11-01), Takaishi
patent: 5777358 (1998-07-01), Yamima
patent: 5895963 (1999-04-01), Yamazaki
patent: 5913150 (1999-06-01), Takaishi
patent: 5943591 (1999-08-01), Vokoun et al.

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