Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-10-17
2006-10-17
Eckert, George (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S164000, C438S799000
Reexamination Certificate
active
07122409
ABSTRACT:
To provide a TFT that can operate at a high speed by forming a crystalline semiconductor film while controlling the position and the size of a crystal grain in the film to use the crystalline semiconductor film for a channel forming region of the TFT. Instead of a metal or a highly heat conductive insulating film, only a conventional insulating film is used as a base film to introduce a temperature gradient. A level difference of the base insulating film is provided in a desired location to generate the temperature distribution in the semiconductor film in accordance with the arrangement of the level difference. The starting point and the direction of lateral growth are controlled utilizing the temperature distribution.
REFERENCES:
patent: 4422090 (1983-12-01), Shepherd et al.
patent: 5056099 (1991-10-01), Bradley
patent: 5508533 (1996-04-01), Takemura
patent: 5580792 (1996-12-01), Zhang et al.
patent: 5580801 (1996-12-01), Maegawa et al.
patent: 5583366 (1996-12-01), Nakazawa
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5893730 (1999-04-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 6043512 (2000-03-01), Adachi
patent: 6215154 (2001-04-01), Ishida et al.
patent: 6245602 (2001-06-01), Ho et al.
patent: 6274462 (2001-08-01), Fiorini et al.
patent: 6323069 (2001-11-01), Yamazaki et al.
patent: 6358766 (2002-03-01), Kasahara
patent: 6410368 (2002-06-01), Kawasaki et al.
patent: 6492659 (2002-12-01), Yamazaki et al.
patent: 6521912 (2003-02-01), Sakama et al.
patent: 6576534 (2003-06-01), Zhang et al.
patent: 6599788 (2003-07-01), Kawasaki et al.
patent: 58-218169 (1983-12-01), None
patent: 06-005862 (1994-01-01), None
patent: 406029321 (1994-02-01), None
patent: 07-130652 (1995-05-01), None
patent: 07131029 (1995-05-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
Furue et al., “Characteristics and Driving Scheme of Polymer—Stabilized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ratio with Gray-Scale Capability,” SID 98 DIGEST, pp. 782-785.
Yoshida et al., “A Full-Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle with Fast Response Time,” SID 97 DIGEST, pp. 841-844.
Terada et al., “Half-V Switching Mode FLCD,” Proceeding of the 46thApplied Physics Association Lectures, 28P-V-8, p. 1316, Mar. 1999.
R. Ishihara et al., “Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films,” Japanese Journal of Applied Physics, vol. 37, No. 3B, pp. 1071-1075, 1998.
K. Shimizu et al., “High-mobility Poly-Si Thin-Film Transistors Fabricated by a Novel Excimer Laser Crystallization Method,” IEEE Transactions an Electron Devices, vol. 40, No. 1, 1993.
Ishihara et al., “Location-Controlled Adjacent Grains Following Excimer-Laser Melting of Si Thin-Films,” 1998, pp. 153-156, AM-LCD.
Kasahara Kenji
Kawasaki Ritsuko
Ohtani Hisashi
Eckert George
Hafiz Mursalin B.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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