Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-20
2006-06-20
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S257000
Reexamination Certificate
active
07064380
ABSTRACT:
A semiconductor device having a nonvolatile memory is reduced in size. In an AND type flash memory having a plurality of nonvolatile memory cells having a plurality of first electrodes, a plurality of word lines crossing therewith, and a plurality of floating gate electrodes disposed at positions which respectively lie between the plurality of adjacent first electrodes and overlap the plurality of word lines, as seen in plan view, the plurality of floating gate electrodes are formed in a convex shape, as seen in cross section, so as to be higher than the first electrodes. As a result, even when nonvolatile memory cells are reduced in size, it is possible to process the floating gate electrodes with ease. In addition, it is possible to improve the coupling ratio between floating gate electrodes and control gate electrodes of the word lines without increasing the area occupied by the nonvolatile memory cells.
REFERENCES:
patent: 5946230 (1999-08-01), Shimizu et al.
patent: 2000-188346 (2000-07-01), None
patent: 2001-085541 (2001-03-01), None
patent: 2003-168748 (2003-06-01), None
Fukumura Tatsuya
Ikeda Yoshihiro
Narumi Shun-ichi
Takesue Izumi
Antonelli, Terry Stout and Kraus, LLP.
Renesas Technology Corp.
Vu David
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