Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

2006-06-27

2006-06-27

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S203000, C257S235000, C257S327000, C257S392000

Reexamination Certificate

active

07067888

ABSTRACT:
Semiconductor regions for the suppression of short channel effects are not provided for a pMIS and an nMIS that constitute an inverter circuit of an input first stage of an I/O buffer circuit, whereas semiconductor regions for the suppression of short channel effects are provided for pMIS and nMIS of inverter circuits of the next stage of an I/O buffer circuit.

REFERENCES:
patent: 5239196 (1993-08-01), Ikeda et al.
patent: 5334870 (1994-08-01), Katada et al.
patent: 5572480 (1996-11-01), Ikeda et al.
patent: 5734185 (1998-03-01), Iguchi et al.
patent: 5780912 (1998-07-01), Burr et al.
patent: 5830788 (1998-11-01), Hiroki et al.
patent: 5834347 (1998-11-01), Fukatsu et al.
patent: 5898203 (1999-04-01), Yoshitomi et al.
patent: 6297105 (2001-10-01), Guo
patent: 6323525 (2001-11-01), Noguchi et al.
patent: 2001/0053099 (2001-12-01), Hidaka et al.
patent: 2002/0017669 (2002-02-01), Sugiura et al.
patent: 2002/0019104 (2002-02-01), Miyagi

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