Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-08
2006-08-08
Baumeister, B. William (Department: 2825)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S319000, C257S321000, C257S324000, C257S326000, C257S315000, C257S311000, C257S322000, C257S257000
Reexamination Certificate
active
07087955
ABSTRACT:
A semiconductor device has a nonvolatile memory employing a split-gate type memory cell structure, using a nitride film as a charge storage layer. An n-type semiconductor region is formed in a main surface of a semiconductor substrate, and then, a memory gate electrode of a memory cell of a split gate type and a charge storage layer are formed over the semiconductor region. Subsequently, side walls are formed on side surfaces of the memory gate electrode, and a photoresist pattern is formed over the main surface of the semiconductor substrate. The photoresist pattern serves as an etching mask, and a part of the main surface of the semiconductor substrate is removed by etching to form a dent. In the region of the dent, the n-type semiconductor region is removed. Then, a p-type semiconductor region for forming a channel of an nMIS transistor for selecting a memory cell is formed.
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Hashimoto Takashi
Ishii Yasushi
Ito Fumitoshi
Kanamaru Yasuhiro
Kawashima Yoshiyuki
Antonelli, Terry Stout and Kraus, LLP.
Baumeister B. William
Renesas Technology Corp.
Yevsikov Victor V
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