Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-21
2006-03-21
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S118000, C438S617000
Reexamination Certificate
active
07015127
ABSTRACT:
Provided is a semiconductor device comprising a first metal film formed above a semiconductor chip, a ball portion formed over said first metal film and made of a second metal, and an alloy layer of said first metal and said second metal which alloy layer is formed between said first metal film and said ball portion, wherein said alloy layer reaches the bottom of said first metal film, and said ball portion is covered with a resin; and a manufacturing method thereof. The present invention makes it possible to improve adhesion between the bonding pad portion and ball portion of a bonding wire over an interconnect, thereby improving the reliability of the semiconductor device.
REFERENCES:
patent: 4891333 (1990-01-01), Baba et al.
patent: 5525546 (1996-06-01), Harada et al.
patent: 5699953 (1997-12-01), Safabakhsh
patent: 6507112 (2003-01-01), Kurihara et al.
Kawanabe Naoki
Matsuzawa Tomoo
Morita Toshiaki
Nakajima Yasuyuki
Tomoi Seiichi
Hoang Quoc
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Nelms David
Renesas Technology Corp.
LandOfFree
Semiconductor device and a method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and a method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and a method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3600958