Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

2006-07-18

2006-07-18

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S342000, C257S401000, C257S620000

Reexamination Certificate

active

07078765

ABSTRACT:
In a technique to improve the high-frequency power gain of an LDMOS, the distance from the surface of a passivation film covering electrode pads to the rear surface of a silicon substrate is set into 200 μm or less, or a trench of 2 μm or more in thickness, in which an insulating film or a conductor is embedded, is formed between a region where a p type impurity is diffused, when a p+type source penetrating layer is formed, and the channel region of a third LDMOS, so as to extend from the front surface of a semiconductor layer toward a silicon substrate. This trench restrains the p+type source penetrating layer from spreading to the channel region, thereby lowering the inductance or the resistance of the source and improving the high-frequency power gain.

REFERENCES:
patent: 6372557 (2002-04-01), Leong
patent: 2002/0167047 (2002-11-01), Yasuhara et al.
patent: 05-218321 (1993-08-01), None
patent: 2002-176142 (2002-06-01), None

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