Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

2005-12-20

2005-12-20

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S341000

Reexamination Certificate

active

06977416

ABSTRACT:
A semiconductor device wherein an avalanche withstand of power MISFET is improved without enlarging cell pitch. In the semiconductor device, impurity ions having a p-type conduction, e.g. B ions, are introduced from a bottom of a contact hole to form a p-type semiconductive region that is provided below a p+-type semiconductive region and in contact with the p+-type semiconductive region and an n−-type single crystal silicon layer and that has an impurity concentration lower than the p+-type semiconductive region. An n-type semiconductive region is formed in the n−-type single crystal silicon layer provided below the p-type semiconductive region as being in contact with the p-type semiconductive region and has an impurity concentration lower than the n−-type single crystal silicon layer.

REFERENCES:
patent: 6057558 (2000-05-01), Yamamoto et al.
patent: 6710403 (2004-03-01), Sapp
patent: 01-192175 (1988-01-01), None
patent: 10-308512 (1997-12-01), None

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