Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

1997-01-21

1999-05-18

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438163, 438299, H01L21/265

Patent

active

059045086

ABSTRACT:
Fabrication of TFTs utilizing self-aligned techniques. Although gate electrodes are made of aluminum, source/drain regions can be activated by a heat treatment. Spacers are formed, using dummy gate electrodes. Gate electrodes are defined, using the spacers. Impurity ions are implanted before the gate electrodes are formed. Thus, the source/drain regions, channel formation regions, and offset regions are formed in a self-alignment manner, using the dummy gate electrodes and the spacers as masks. Since the heat treatment is made before the formation of the gate electrodes, the gate electrodes can be formed from aluminum having a low melting point.

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S. Wolf & R.N. Tauber, "Silicon Processing for the VLSI Era", vol. I, pp. 152-153, 304-305, Aug. 1990.

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