Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-19
2005-04-19
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S072000
Reexamination Certificate
active
06882012
ABSTRACT:
To form a driver circuit to be mounted to a liquid crystal display device or the like on a glass substrate, a quartz substrate, etc., and to provide a display device mounting driver circuits formed from different TFTs suited for their respective operational characteristics. A stick driver circuit on the scanning line side and a stick driver circuit on the data line side are different in structure, and have different TFTs in which the thickness of a gate insulating film, the channel length and other parameters are varied depending on required circuit characteristics. In the stick driver on the scanning line side, which is composed of a shift register circuit, a level shifter circuit, and a buffer circuit, the buffer circuit has a TFT with a thick gate insulating film because it is required to have a withstand voltage of 30 V. The stick driver circuit on the data line side, which is composed of a shift register circuit, a latch circuit, a level shifter circuit, and a D/A converter circuit, is driven at a high frequency, and hence its shift register circuit and latch circuit have thin gate insulating films and the channel length thereof is shorter than that of the TFT of the buffer circuit.
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Hermann Schenk et al., “Polymers for Light Emitting Diodes”, EuroDisplay '99 Proceedings, pp. 33-37.
Arai Yasuyuki
Koyama Jun
Yamazaki Shunpei
Flynn Nathan J.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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