Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-28
2011-06-28
Pizarro, Marcos D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S532000, C257SE27081, C257SE21645, C257SE21008, C257SE29343, C438S239000, C438S396000
Reexamination Certificate
active
07968924
ABSTRACT:
In a semiconductor device comprising a capacitive element, an area of the capacitive element is reduced without impairing performance, and further, without addition of an extra step in a manufacturing process. A first capacitor is formed between an active region of a semiconductor substrate provided through a first capacitive insulating film and a lower electrode comprised of a conductor film in the same layer as a select gate electrode of a select, a second capacitor is formed between the lower electrode, and an upper electrode comprised of a conductor film in the same layer as a memory gate electrode of a memory, provided through the second capacitive insulating film in the same layer as the insulating films of a multi-layer structure, including a charge storage layer, and a stacking-type capacitive element is comprised of the first capacitor and the second capacitor, wherein a planar shape of the lower electrode is a grid-like shape having a plurality of lengths of linear conductor films each having a first width, formed along a first direction with a first interval provided therebetween, and a plurality of lengths of linear conductor films each having a second width, formed along a second direction (the direction intersecting the first direction) with a second interval provided therebetween.
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Gupta Raj
Miles & Stockbridge P.C.
Pizarro Marcos D
Renesas Electronics Corporation
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