Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate
2011-08-23
2011-08-23
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
C438S285000, C257SE29246, C257SE21403, C257SE27099
Reexamination Certificate
active
08004010
ABSTRACT:
In a semiconductor device with a shared contact, a gate electrode is formed via a gate insulating film on a semiconductor substrate and a sidewall insulating film is formed on both side faces of the gate electrode. At least one of the surface parts of the semiconductor substrate adjacent to both sides of the gate electrode is removed beyond the lower part of the sidewall insulating film and to the underside of the gate electrode. Then, the gate insulating film exposed in the remove part is removed. An impurity-doped semiconductor layer is formed in the part where the semiconductor substrate and the gate insulating film have been removed.
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Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Han Jonathan
Kabushiki Kaisha Toshiba
Vu David
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