Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

2008-06-18

2009-12-08

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S672000, C438S700000, C257SE21577, C257SE21579, C257SE21585

Reexamination Certificate

active

07629251

ABSTRACT:
For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.

REFERENCES:
patent: 2003/0111729 (2003-06-01), Leu et al.
patent: 2004/0152334 (2004-08-01), Ohto et al.
patent: 2005/0153566 (2005-07-01), Han et al.
patent: 2003-124307 (2003-04-01), None
patent: 2003-163265 (2003-06-01), None
patent: 2004-221275 (2004-08-01), None

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