Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-12-11
1994-08-23
Wojkciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257383, 257384, 257385, 257413, 437177, 437189, 437192, 437200, H01L 2348, H01L 2144
Patent
active
053410149
ABSTRACT:
A semiconductor device of the present invention includes a semiconductor substrate, a p-type impurity diffused region formed in the semiconductor substrate, and a polycide interconnection electrically connected to the p-type impurity diffused region. In the semiconductor device, the polycide interconnection includes a first polysilicon film, a refractory metal silicide film formed on the first polysilicon film, and a second polysilicon film formed on the refractory metal silicide film.
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patent: 4985746 (1991-01-01), Asahina
L. C. Parrillo et al., "A Fine-Line CMOS Technology That Uses P.sup.+ -Polysilicon/Silicide Gates For NMOS and PMOS Devices", IEEE, IEDM 84, 15.6, at pp. 418-422, 1984.
S. P. Murarka et al., "Dopant Redistribution in Silicide-Silicon and Silicide-Polycrystalline Silicon Bilayered Structures", J. Vac. Sci. Technol. B 5(6), at pp. 1674-1688, Nov./Dec. 1987.
F. C. Shone et al., "Formation of 0.1 .mu.m N.sup.+ /P and P.sup.+ /N Junction by Doped Silicide Technology", IEEE, IEDM 85, 15.3, at pp. 407-410, 1986.
F. C. Shone et al., "Modeling Dopant Redistribution in SiO.sub.2 /WSi.sub.2 /Si Structure", IEEE, IEDM 86, 20.5, at pp. 534-537, 1986.
C. L. Chu et al., "Technology Limitations for N.sup.+ /P.sup.+ Polycide Gate CMOS Due to Lateral Dopant Diffusion in Silicide/Polysilicon Layers", IEEE Electron Device Letters, vol. 12, No. 12, at pp. 696-698, Dec. 1991.
H. Hayashida et al., "Dopant Redistribution in Dual Gate W-Polycide CMOS and Its Improvement by RTA", 1989 Symposium on VLSI Technology, Digest of Technical Papers, Section 4-2 at pp. 29-30, May 22-25, 1989.
Fujii Toyokazu
Naito Yasushi
Matsushita Electric - Industrial Co., Ltd.
Wojkciechowicz Edward
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