Semiconductor device and a method for the production of the same

Details Semiconductor device and a method for the production of the same Semiconductor device and a method for the production of the same

1998-11-19

2000-08-22

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

257411, H01L 213205

Patent

active

061071749

ABSTRACT:
A semiconductor device is disclosed which comprises a semiconductor substrate and an insulating film disposed on the substrate. The insulating film is a oxynitride film prepared by nitriding a thermal oxide film, which has been formed on the substrate, in an atmosphere of nitriding gas. The nitriding is conducted for a nitridation time of 10.sup.6.6-T N.sup./225 seconds or shorter wherein T.sub.N is the nitridation temperature in degree centigrade, or conducted so as to have a nitrogen concentration of about 8 atomic % or less, at least in the vicinity of the interface between the oxynitride film and the substrate. Also disclosed is a method for the production of the semiconductor device.

REFERENCES:
patent: 3670403 (1972-06-01), Lawrence et al.
patent: 4282270 (1981-08-01), Nozaki et al.
patent: 4343657 (1982-08-01), Ito et al.
patent: 4416952 (1983-11-01), Nishizawa et al.
patent: 4621277 (1986-11-01), Ito et al.
patent: 4784973 (1988-11-01), Stevens et al.
patent: 4851370 (1989-07-01), Doklan et al.
patent: 5198392 (1993-03-01), Fukuda et al.
D.K. Shih et al., "Metal-Oxide-Semiconductor Characteristics of Rapid Thermal Nitrided Thin Oxides", Applied Physics Letters, vol. 52, No. 16, May 16, 1988, pp. 1698-1700.
Takashi Ito et al., "Advantages of Thermal Nitride and Nitroxide Gate Films in VLSI Process", IEEE Transactions on Electron Devices, vol. ED-29, No. 4, Apr. 1982, pp. 498-502.
Schmidt, MA., et al, "Inversion Layer Mobility of MOSFET's with Nitrided Oxide Gate Dielectrics", IEEE Transactions on Electron Devices, 35(10):1627-32, (Oct. 1988).
Copy of European Office Action dated Aug. 31, 1999, in European Application No. 89123598.8 (5 pages).
Hori et al., "Charge-Trapping Properties of Ultrathin Nitrided Oxides Prepared by Rapid Thermal Annealing", I.E.E.E. Transactions on Electronic Devices, vol. 35, No. 7, pp. 904-910 (Jul. 1988).
Henscheid et al., "Dielectric Formation by Rapid Thermal Nitridation", Extended Abstracts, vol. 88-2, pp. 433-434 (Oct. 9-14, 1988).
Hori et al., "Improvement of Dielectric Strength . . . Nitrided Oxides", VLSI Sump. Tech. Dig., pp. 63-64 (1987).
Henscheid et al., "RTN of Thin SiO.sub.2 Films", Journal of Electronic Materials, vol. 18, pp. 99-104, No. 2 (1989).
Vasquez & Madhukar, "A Kinetic Model for the Thermal Nitridation of SiO.sub.2 /Si", J. Appl. Phys. vol. 60(1), pp. 234-242.
Moslehi & Saraswat, "Thermal Nitridation of Si and SiO.sub.2 for VLSI", I.E.E.E. Trans. Elec. Dev., vol. Ed. 32, No. 2, pp. 106-113 (Feb. 2, 1985).
Hori et al., "Improvement of Dielectric Integrity of TiSi.sub.x -Polycide-Gate System by Using Rapidly Nitrided Oxides", Journal of the Electrochemical Society, vol. 136, No. 10 (Oct. 1985).
Moslehi et al., "Rapid Thermal Nitridation of SiO.sub.2 for Nitroxide Thin Dielectrics", Appl. Phys. Lett. vol. 47(10), pp. 1113-1115 (Nov. 1985).

Affiliated with

Also associated with

Rating

Semiconductor device and a method for the production of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and a method for the production of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and a method for the production of the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-580477