Semiconductor device and a method for the manufacture thereof

Details Semiconductor device and a method for the manufacture thereof Semiconductor device and a method for the manufacture thereof

1993-04-12

1995-12-19

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

257212, 257342, 257476, H01L 2701, H01L 2948

Patent

active

054770777

ABSTRACT:
In diodes used with high withstand voltages, the pin-type diode has a low on-resistance, but a large switching loss. Even if a lifetime killer is introduced, the low on-resistance and the switching loss cannot be compatible since both factors are in a trade-off relation. The invention overcomes these problems by providing a semiconductor device that includes p.sup.+ -type anode layers and p.sup.+ -type floating drain layers that are connected to the anode layers by a MOSFET 20 formed on the surface of an n.sup.- -type conductivity-modulating layer. When a forward voltage is applied, holes are injected from the drain layers to create an element with a conductivity-modulated condition and realize a low on-resistance. By the time a reverse voltage is applied, the drain layers have already been separated to reduce the number of excessive carriers. Thus, the reverse recovery current is suppressed.

REFERENCES:
patent: 3872491 (1975-03-01), Hanson et al.
patent: 4521795 (1985-06-01), Coe et al.
patent: 4642674 (1987-02-01), Schoofs
patent: 4831423 (1989-05-01), Shannon
patent: 5001535 (1991-03-01), Nishizawa et al.

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