Semiconductor device and a method for manufacturing thereof

Details Semiconductor device and a method for manufacturing thereof Semiconductor device and a method for manufacturing thereof

1997-03-07

1999-03-23

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 29788

Patent

active

058863770

ABSTRACT:
An ONO layer 18 located vicinity of a transistor TR1 for programming is removed. A floating gate FG1 of the transistor TR1 is formed by carrying out etching of a polysilicon layer 16. Then, an inter-layer film SM1 of the transistor TR1 is formed by carrying out oxidation process. The inter-layer film SM1 is formed so as to cover the floating gate FG1. Arsenic is implanted ionically into a semiconductor-substrate 12 using the floating gate FG1 and the inter-layer film SM1 as a mask. Ions of the arsenic thus implanted do not pass through the inter-layer film SM1 and are stopped at the surface. Because the inter-layer film SM1 is made of a silicon oxidation layer formed relatively thick. So that, the inter-layer film SM1 maintains its charge-storage characteristic originally owns even when the ion implantation is carried out.

REFERENCES:
patent: 5557123 (1996-09-01), Ohta
patent: 5587603 (1996-12-01), Kowshik
patent: 5633520 (1997-05-01), Wu et al.

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