Active solid-state devices (e.g. – transistors – solid-state diode – Including region containing crystal damage
Patent
1995-09-15
1997-10-07
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Including region containing crystal damage
257510, 257513, 257519, 257520, 257618, 257622, 257415, 257418, H01L 2930
Patent
active
056751761
ABSTRACT:
A semiconductor device has a semiconductor substrate having a groove, and a semiconductor element formed in a surface region of the semiconductor substrate. A substance having a thermal expansion coefficient different from the semiconductor substrate is embedded in at least a portion of the groove, a crystal defect is generated from the region near the bottom of the groove in the semiconductor substrate, thereby alleviating stress and strain in other regions of the semiconductor substrate, such that such regions cannot generate crystal defects in a region necessary for a circuit operation of the semiconductor element of the surface region.
REFERENCES:
Fahey et al., "Stress-induced dislocations in silicon integrated circuits" IBM J. Res Develop., vol. 36, No. 2, Mar. 1992, pp. 158-182 Mar. 3, 1992.
S. Matsuda et al., "Three-Dimensional Mechanical Stress Analysis of Trench Isolation along {111} Gliding Planes." Technical Digest of International Electron Devices Meeting, 1994. Jan.
Hayashi Yoshiki
Inaba Satoshi
Kubota Hiroyasu
Matsushita Yoshiaki
Numano Masanori
Kabushiki Kaisha Toshiba
Wojciechowicz Edward
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