Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-11-27
1998-06-02
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257370, 257577, 257592, H01L 2702
Patent
active
057604487
ABSTRACT:
A semiconductor device having an electrostatic discharge protection device and at least one accompanying device selected from the group comprising of a N or P channel MOS transistor, CMOS, bipolar transistor and BiCMOS, in which the electrostatic discharge protection device comprises a vertical type bipolar transistor including; a semiconductor substrate; an epitaxial layer laminated on the semiconductor substrate; a buried collector of a first conductivity type which is formed of the semiconductor substrate or which is formed from the surface of the semiconductor substrate to the epitaxial layer; a base of a second conductivity type which is a lightly doped well and formed on the epitaxial layer; and an emitter of the first conductivity type and formed on the surface layer of the base of the second conductivity type; and in which the base is adapted to have impurity concentration and depth so that a punch-through is generated between the emitter and the collector of the electrostatic discharge protection device when a voltage higher than the operation voltage of the accompanying device or a voltage lower than the ground voltage is applied between the emitter and the collector, the base and the emitter being shorted with each other.
REFERENCES:
patent: 5471082 (1995-11-01), Maeda
Prenty Mark V.
Sharp Kabushiki Kaisha
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