Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1997-04-17
1998-11-17
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257212, 257341, 257655, H01L 29744
Patent
active
058380272
ABSTRACT:
An IGBT (Insulated Gate Bipolar Transistor) is composed of a P.sup.+ silicon substrate, a first epitaxial layer in which the first conductive type high density impurities are composed at a gentle slope, a semiconductor substrate which is located at the above first epitaxial layer and composed of a second epitaxial layer formed of the first conductive type low density impurities, a P.sup.- well which is composed at the surface part of the second epitaxial layer, an active area which is formed and included in the P.sup.- well, and a gate electrode which is folded with part of the edge of the P.sup.- well, included by an insulated oxidation film and formed on the semiconductor substrate. The first epitaxial layer corresponding to the lower part of the above P.sup.- well is composed of the first conductive type low density impurities, and the first epitaxial layer corresponding to the lower part of a gate electrode, in which an insulated oxidation film is included, is composed of the first conductive type high density impurities layer, and has a structure in which an N.sup.+ and an N.sup.- layers are formed horizontally by turns. Latch-up phenomenon during normal operation is restrained, by improving the epitaxial layer of the semiconductor substrate, and reliability of the semiconductor device is enhanced by increasing the safe operating area and short circuit stability.
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patent: 5025293 (1991-06-01), Seki
patent: 5031009 (1991-07-01), Fujihara
patent: 5200632 (1993-04-01), Sakurai
patent: 5355003 (1994-10-01), Tomomatsu
patent: 5569941 (1996-10-01), Takahashi
Kim Ho-hyun
Park Jae-Hong
Hardy David B.
Samsung Electronics Co,. Ltd.
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