Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-03-08
2010-12-14
Pham, Hoai v (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S332000, C257SE27091
Reexamination Certificate
active
07851855
ABSTRACT:
A semiconductor device includes a semiconductor substrate provided with an active region including a gate forming area, a source forming area and a drain forming area. A recess is formed in the gate forming area. A gate is formed over the gate forming area that is formed with the recess and includes an insulation layer formed at an upper end portion of a side wall of the recess that is in contact with the source forming area. A source area and a drain area are formed in the active region on opposite sides of the gate.
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patent: 2007/0082442 (2007-04-01), Kim
patent: 1020000019080 (2000-04-01), None
patent: 1020040064924 (2004-07-01), None
patent: 1020050038425 (2005-04-01), None
patent: 1020060075426 (2006-07-01), None
Hynix / Semiconductor Inc.
Pham Hoai v
Townsend and Townsend / and Crew LLP
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