Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-14
2009-06-09
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21579
Reexamination Certificate
active
07544601
ABSTRACT:
Disclosed are embodiments relating to a semiconductor device and a method of manufacturing a semiconductor device that may prevent an increase of a dielectric effective constant of the IMD. In embodiments, a semiconductor device may include a substrate having a source/drain area, a gate electrode formed on the semiconductor substrate, a first inter-metal dielectric layer formed on the semiconductor substrate and having a first damascene pattern, a first barrier layer formed on the damascene pattern, a first metal line formed on the first barrier layer, and a first metal capping layer formed in the first damascene pattern.
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Dongbu Hi-Tek Co., Ltd.
Le Thao P.
Sherr & Vaughn, PLLC
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