Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-26
2011-10-18
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S616000
Reexamination Certificate
active
08039892
ABSTRACT:
A semiconductor device is disclosed. In one embodiment, the semiconductor device includes a channel formation region formed on a side wall, having a mixture of a first semiconductor material with a first lattice constant, a second semiconductor material and carbon, the second semiconductor material having a second lattice constant differing from the first lattice constant.
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Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Rao Steven
Weiss Howard
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