Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-26
2010-10-05
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29257
Reexamination Certificate
active
07808040
ABSTRACT:
A semiconductor device is disclosed. In one embodiment, the semiconductor device includes a channel formation region formed on a side wall and includes a mixture of a first semiconductor material, having a first lattice constant and a second semiconductor material with a second lattice constant differing from the first lattice constant, wherein a proportion of the second semiconductor material increases with increasing distance from the side wall.
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Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Prenty Mark
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