Semiconductor device and a method for fabricating the same

Details Semiconductor device and a method for fabricating the same Semiconductor device and a method for fabricating the same

1975-01-27

1977-05-03

Lynch, Michael J.

357 52, 357 90, 357 91, H01L 2978

Patent

active

040218350

ABSTRACT:
A MOS-FET (Metal-Oxide-Semiconductor Field Effect Transistor) comprises a semiconductor body, source and drain regions disposed in the body at portions separated from each other, a second semiconductor region having a higher impurity concentration than that of the body, formed by ion implantation in the body between the source and drain regions, a first semiconductor region having a lower impurity concentration than that of the second semiconductor region but a higher impurity concentration than that of the body, and having an opposite conductivity type to that of the second semiconductor region, formed by ion implantation, so that the second semiconductor region is very thin, and which has a very small amount of a minute current, that is a tailing current.

REFERENCES:
patent: 3283221 (1966-11-01), Heiman
patent: 3814992 (1974-06-01), Kump et al.
patent: 3891468 (1975-06-01), Ito et al.

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