Semiconductor device and a manufacturing method thereof

Details Semiconductor device and a manufacturing method thereof Semiconductor device and a manufacturing method thereof

1995-10-23

1999-04-06

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257365, H01L 310328

Patent

active

058922474

ABSTRACT:
The semiconductor device comprises a substrate, a first conductive layer formed on the substrate with a first insulating layer inserted therebetween, thereby to constitute a first gate electrode, a second conductive layer selectively formed on the first gate electrode with a second insulating layer inserted therebetween, and a third conductive layer formed on the first and second conductive layer, thereby to constitute first and second electrodes respectively connected to the first and second conductive layers.

REFERENCES:
patent: 4704622 (1987-11-01), Capasso et al.
patent: 5600168 (1997-02-01), Lee
patent: 5654590 (1997-08-01), Kuramochi
Applied Physics Letter, vol. 63, No. 16, pp. 2219-2221, Oct. 18, 1993, J. H. Burroughes, et al., "Electronic Properties of a One-Dimensional Channel Field Effect Transistor Formed By Molecular Beam Epitaxial Regrowth on Patterned GaAs".

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