Semiconductor device and a manufacturing method of the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S637000, C438S428000, C438S438000, C438S781000

Reexamination Certificate

active

07611983

ABSTRACT:
A first BPSG film covering a transistor is formed. Next, a second BPSG film is formed on the first BPSG film. The B concentration in the first BPSG film is about five times higher than the B concentration in the second BPSG film. Next, the first BPSG film is separated into a part of a source diffusion layer side and a part of a drain diffusion layer side, with a gate electrode being a boundary. Subsequently, a contact hole reaching the source diffusion layer is formed in the first and second BPSG films. Then, by removing the first BPSG film exposed to the contact hole by isotropic etching, a hollow portion is formed between the source diffusion layer and the second BPSG film. Then, a barrier metal film made of TiN or the like is formed in the hollow portion.

REFERENCES:
patent: 2002/0197816 (2002-12-01), DeBoer
patent: 08-274066 (1996-10-01), None
patent: 9-148434 (1997-06-01), None
patent: 10-50835 (1998-02-01), None
patent: 2000-195950 (2000-07-01), None
patent: 2003-197739 (2003-07-01), None

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