Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-10
1999-08-31
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257345, 257408, 257640, H01L 2976, H01L 2994
Patent
active
059457112
ABSTRACT:
A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
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Takemura Yasuhiko
Teramoto Satoshi
Martin-Wallace Valencia
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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