Semiconductor device adopting a self-aligned contact structure a

Details Semiconductor device adopting a self-aligned contact structure a Semiconductor device adopting a self-aligned contact structure a

1999-03-22

2000-08-15

Wojchechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257509, 257516, 257758, 438239, 438265, 438294, 438439, 438622, H01L 2972

Patent

active

061040525

ABSTRACT:
In a DRAM adopting a self-aligned contact structure, an opening portion of predetermined size is formed in advance in an insulation film which surrounds an on-field gate electrode formed on an element isolating insulation film. The on-field gate electrode contacts a gate contact through the opening portion. A contact hole for the gate contact can thus be formed in self-alignment as can be the contact holes for a bit-line contact and an active contact. Consequently, the contact hole for the gate contact reaching the on-field gate can be formed simultaneously with the contact holes for the bit-line contact and active contact, thereby greatly reducing the number of manufacturing steps.

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