Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-06-10
2000-03-07
Chang, Joni
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257378, H01L 2976
Patent
active
060344024
ABSTRACT:
A semiconductor device comprises: a substrate; a first buried layer of a first conduction type formed in the substrate; a second buried layer of the first conduction type formed in the substrate; a third buried layer of the first conduction type formed in the substrate; an epitaxial layer of the first conduction type formed on the substrate; a well region of a second conduction type formed in the epitaxial layer above the third buried layer; source/drain regions of the first conduction type formed in the well region; a first base region of the second conduction type formed in the epitaxial layer above the first buried layer; a first impurity region of the first conduction type formed on the first base region; a second base region of the second conduction type formed in the epitaxial layer above the second buried layer; a second impurity region of the first conduction type formed on the second base region; a first lead-out layer of the first conduction type connected to the first buried layer; and a second lead-out layer of the first conduction type connected to the second buried layer. The second buried layer has an impurity concentration substantially equal to that of the third buried layer.
REFERENCES:
patent: 5744855 (1998-04-01), Maki et al.
patent: 5751054 (1998-05-01), Yilmaz et al.
patent: 5753957 (1998-05-01), Watabe
Ammo Hiroaki
Gomi Takayuki
Chang Joni
Sony Corporation
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