Semiconductor device

Details Semiconductor device Semiconductor device

2011-08-16

2011-08-16

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S270000

Reexamination Certificate

active

07999311

ABSTRACT:
A semiconductor device is disclosed. One embodiment includes a trench within a semiconductor body and a gate insulating structure at opposing sidewalls within the trench. A gate electrode structure adjoins the gate insulating structure within the trench and a dielectric structure adjoins the gate electrode structure within the trench. The gate electrode structure is in contact with the semiconductor body at a bottom side of the trench and is electrically coupled to a drain zone over an element having a voltage blocking capability.

REFERENCES:
patent: 7459365 (2008-12-01), Rüb et al.
patent: 2007/0002383 (2007-01-01), Ohmiya et al.
patent: 2010/0301408 (2010-12-01), Werner

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