Semiconductor device

Details Semiconductor device Semiconductor device

2011-03-08

2011-03-08

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S164000, C438S166000, C257SE21134, C257SE21413, C257SE21414, C257SE27111, C257SE29137, C257SE29151, C257SE29278, C257SE29293, C257SE29295

Reexamination Certificate

active

07902002

ABSTRACT:
When a semi-conductor film is irradiated with conventional pulsed laser light, unevenness, which is called as ridge, is caused on the surface of the semiconductor film. In the case of a top-gate type TFT, element characteristics are changed depending on the ridge. In particular, there is a problem in that variation in the plural thin film transistors electrically connected in parallel with one another. According to the present invention, in manufacturing a circuit including plural thin film transistors, the width LP of a region (not including a microcrystal region) that is melted by irradiating a semiconductor film with light of a continuous wave laser is enlarged, and active layers of a plurality of thin film transistors (that are electrically connected in parallel with one another) are arranged in one region.

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International Search Report for PCT/JP2005/013985 dated Nov. 8, 2005.
Written Opinion of the International Searching Authority for PCT/JP2005/013985 dated Nov. 8, 2005.

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