Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-01
2011-03-01
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S173000, C257S356000, C257S360000, C257S363000, C257SE29015, C257SE29008, C438S155000
Reexamination Certificate
active
07898035
ABSTRACT:
A semiconductor device has a silicon substrate, an external connection terminal disposed on the silicon substrate, an internal circuit region disposed on the silicon substrate, an NMOS transistor for electrostatic discharge protection provided between the external connection terminal and the internal circuit region, and a wiring connecting together the external connection terminal and the NMOS transistor and connecting together the NMOS transistor and the internal circuit region. The NMOS transistor has a drain region and a gate electrode whose potential is fixed to a ground potential. The external connection terminal is smaller than the drain region and is formed above the drain region.
REFERENCES:
patent: 5910675 (1999-06-01), Horiguchi et al.
patent: 6940131 (2005-09-01), Baldwin et al.
patent: 2005/0023692 (2005-02-01), Matsunaga et al.
patent: 2005/0041169 (2005-02-01), Hashimoto et al.
patent: 2005/0077551 (2005-04-01), Halamik et al.
patent: 2005/0224883 (2005-10-01), Huang et al.
patent: 2007/0034960 (2007-02-01), Zhang et al.
patent: 2007/0235809 (2007-10-01), Hayano
patent: 2009/0152633 (2009-06-01), Takasu et al.
Patent Abstracts of Japan, publication No. 07-045829, publication date Feb. 14, 1995.
Takasu Hiroaki
Yamamoto Sukehiro
Adams & Wilks
Gebreyesus Yosef
Gurley Lynne A
Seiko Instruments Inc.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2767657