Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-08
2008-01-08
Warren, Matthew E. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S048000, C257S331000, C257S738000, C257SE23021, C257SE23179
Reexamination Certificate
active
07317224
ABSTRACT:
A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1formed along a periphery of the chip region CA and a gate finger portion G2arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.
REFERENCES:
patent: 6429532 (2002-08-01), Han et al.
patent: 6479888 (2002-11-01), Hirashima et al.
patent: 6653740 (2003-11-01), Kinzer et al.
patent: 7-249770 (1995-09-01), None
Matsuura Nobuyoshi
Shirai Nobuyuki
Miles & Stockbridge P.C.
Renesas Technology Corp.
Warren Matthew E.
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