Semiconductor device

Details Semiconductor device Semiconductor device

2011-08-16

2011-08-16

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21180, C257SE21423, C438S287000

Reexamination Certificate

active

07999305

ABSTRACT:
A semiconductor device includes an element region having a channel region, and a unit gate structure inducing a channel in the channel region, the unit gate structure including a tunnel insulating film formed on the element region, a charge storage insulating film formed on the tunnel insulating film, a block insulating film formed on the charge storage insulating film, and a control gate electrode formed on the block insulating film, wherein a distance between the element region and the control gate electrode is shorter at a center portion of the unit gate structure than at both ends thereof, as viewed in a section parallel to a channel width direction.

REFERENCES:
patent: 7223658 (2007-05-01), Chen et al.
patent: 2002/0130350 (2002-09-01), Shin et al.
patent: 2002/0149081 (2002-10-01), Goda et al.
patent: 2005/0205923 (2005-09-01), Han et al.
patent: 2007/0075352 (2007-04-01), Irie
patent: 2008/0061361 (2008-03-01), Lee et al.
patent: 2008/0290394 (2008-11-01), Duan et al.
patent: 2004-158810 (2004-06-01), None

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